Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Principal Design Engineer, you will build the future of memory by architecting and delivering high‑performance DRAM circuit compositions for advanced technology nodes. In this highly visible technical leadership role, you’ll develop innovation across building, layout, verification, and silicon validation. You will collaborate closely with multi-functional teams to deliver scalable, manufacturable solutions for next-generation memory products. Your work will directly influence performance, power, reliability, and time‑to‑market for Micron’s groundbreaking memory technologies.

Responsibilities

Design and optimize DRAM circuits spanning digital, analog, and memory core subsystems to meet aggressive power, performance, and reliability targets
Develop and refine floorplans, routing strategies, power delivery networks, sense margins, timings, and die‑size tradeoffs
Perform advanced circuit simulations using FINESIM, HSPICE, and VERILOG, analyzing speed, power, noise, and long‑term reliability
Model parasitics, verify power and signal integrity, and support validation, reticle experiments, and tape‑out revisions
Drive simulation‑to‑silicon correlation, identify gaps, and recommend schematic and layout improvements
Lead technical reviews, documentation, and best‑practice standardization across design and layout teams
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Principal Memory Design Engineer, HBM

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Responsibilities