Principal Memory Design Engineer, Pathfinding

Job description

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Memory Design Engineer in Micron’s Pathfinding Design Team, you will play a key role in crafting next-generation memory technologies. This position involves contributing to defining, developing, and analyzing mixed-signal circuits. These paths span from the memory array to the interface block for memory technologies, including DRAM and emerging memories. You will work on novel concept development, circuit simulation, optimization, and floor planning to enable groundbreaking memory solutions!

Responsibilities:

• Provide technical direction and design implementation for mixed-signal circuit strongly tied to memory core.    
• Collaborate closely with physical design teams to ensure functionalities, timing closure, robustness, and power intent alignment.
• Experience with modeling and simulation of ICs using HSPICE/finesim.

Minimum Qualifications:

• Bachelor’s or master’s degree in electrical engineering, Computer Engineering, or related field.
• 8+ years of experience in high-speed/bandwidth data-path design.
• Proficiency with UNIX and CADENCE design environment (Simulation, Schematic entry, SPF extraction)

Preferred Qualifications:

• Memory core knowledge and design experience.
• DDR, or other high-performance memory architectures
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